133 citations · 451 across the 15 of their papers we have counts for
15 papers
High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
R. Arcidiacono, G. Borghi, M. Boscardin +19
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the sig…
DC-coupled resistive silicon detectors for 4-D tracking
L. Menzio, R. Arcidiacono, G. Borghi +14
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors
Federico Siviero, Roberta Arcidiacono, Giacomo Borghi +17
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D…
The second production of RSD (AC-LGAD) at FBK
M. Mandurrino, R. Arcidiacono, A. Bisht +15
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept
Lorenzo De Cilladi, Thomas Corradino, Gian-Franco Dalla Betta +2
The paper presents the simulation studies of 10 m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost…
Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science
Coralie Neubüser, Thomas Corradino, Gian-Franco Dalla Betta +2
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiment…
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
M. Tornago, R. Arcidiacono, N. Cartiglia +18
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis…
High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)
M. Mandurrino, N. Cartiglia, M. Tornago +7
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazio…
First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking
M. Mandurrino, R. Arcidiacono, M. Boscardin +8
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-…
First FBK Production of 50m Ultra-Fast Silicon Detectors
V. Sola, R. Arcidiacono, M. Boscardin +8
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diod…
Radiation resistant LGAD design
M. Ferrero, R. Arcidiacono, M. Barozzi +16
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations…
Role of microstructure in porous silicon gas sensors for NO
Zeno Gaburro, Paolo Bettotti, Massimo Saiani +4
Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO, even at concentrations below 100 ppb. However, sensitivity stron…
Opposite effects of NO on electrical injection in porous silicon gas sensors
Zeno Gaburro, Claudio J. Oton, Lorenzo Pavesi +1
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO. A concentration of 10 ppb can be detected by monitoring the c…