133 citations · 451 across the 15 of their papers we have counts for
13 papers · 1 filter
High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
R. Arcidiacono, G. Borghi, M. Boscardin +19
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the sig…
DC-coupled resistive silicon detectors for 4-D tracking
L. Menzio, R. Arcidiacono, G. Borghi +14
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors
Federico Siviero, Roberta Arcidiacono, Giacomo Borghi +17
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D…
The second production of RSD (AC-LGAD) at FBK
M. Mandurrino, R. Arcidiacono, A. Bisht +15
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept
Lorenzo De Cilladi, Thomas Corradino, Gian-Franco Dalla Betta +2
The paper presents the simulation studies of 10 m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost…
Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science
Coralie Neubüser, Thomas Corradino, Gian-Franco Dalla Betta +2
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiment…
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
M. Tornago, R. Arcidiacono, N. Cartiglia +18
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis…
High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)
M. Mandurrino, N. Cartiglia, M. Tornago +7
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazio…
First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking
M. Mandurrino, R. Arcidiacono, M. Boscardin +8
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-…
First FBK Production of 50m Ultra-Fast Silicon Detectors
V. Sola, R. Arcidiacono, M. Boscardin +8
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diod…
Radiation resistant LGAD design
M. Ferrero, R. Arcidiacono, M. Barozzi +16
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations…