5 papers
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
L. Paolozzi, R. Cardarelli, S. Débieux +12
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The…
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
G. Iacobucci, R. Cardarelli, S. Débieux +9
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concep…
Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2
Kuanchen Xiong, Lei Li, Asher Madjar +7
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed…
Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project
L. Paolozzi, Y. Bandi, M. Benoit +13
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of th…
Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water
Xin Jin, Kuanchen Xiong, Roderick Marstell +6
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMO…