2 papers
physics.ins-det2019
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
G. Iacobucci, R. Cardarelli, S. Débieux +9
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concep…
physics.ins-det2018
Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
John Anders, Mathieu Benoit, Saverio Braccini +26
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel se…