output
20002026
most citedTunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

170 citations

Showing 2015Show all

5 papers · 1 filter

cond-mat.mes-hall2015★ 41 cited

Going Ballistic: Graphene Hot Electron Transistors

Sam Vaziri, Anderson D. Smith, Mikael Östling +11

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…

cond-mat.mes-hall2015★ 90 cited

Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics

Antonio Di Bartolomeo, Filippo Giubileo, Francesco Romeo +5

We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure rang…

cond-mat.mes-hall2015★ 62 cited

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Sam Vaziri, Melkamu Belete, Eugenio Dentoni Litta +4

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. I…

physics.optics2015★ 34 cited

Vertical optical ring resonators fully integrated with nanophotonic waveguides on silicon-on-insulator substrates

Abbas Madani, Moritz Kleinert, David Stolarek +3

We demonstrate full integration of vertical optical ring resonators with silicon nanophotonic waveguides on silicon-on-insulator substrates to accomplish a significant step towards…

cond-mat.mtrl-sci2015★ 23 cited

Bottom-up assembly of metallic germanium

G. Scappucci, W. M. Klesse, L. A. Yeoh +7

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these r…