170 citations
- Brandenburg University of Technology Cottbus-SenftenbergDE24 papers
- Roma Tre UniversityIT15 papers
- European Organization for Nuclear ResearchCH10 papers
- University of GenevaCH10 papers
- University of PisaIT9 papers
- University of SalernoIT9 papers
- Forschungszentrum JülichDE8 papers
- Technische Universität BerlinDE7 papers
- KTH Royal Institute of TechnologySE6 papers
- RWTH Aachen UniversityDE6 papers
- Istituto Nazionale di Fisica Nucleare, Roma Tor VergataIT5 papers
- CIC nanoGUNEES4 papers
5 papers · 1 filter
Vertical Graphene Base Transistor
Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski +5
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off r…
Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films
Erwin Hildebrandt, Jose Kurian, Mathis M. Müller +3
We have synthesized highly oxygen deficient HfO thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacanci…
Direct Graphene Growth on Insulator
Gunther Lippert, Jarek Dabrowski, Max C. Lemme +3
Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent f…
Field emission from single and few-layer graphene flakes
S. Santandrea, F. Giubileo, V. Grossi +5
We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were p…
Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
Antonio Di Bartolomeo, Filippo Giubileo, Salvatore Santandrea +4
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is…