Flexible One-Dimensional Metal-Insulator-Graphene Diode

Abstract

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

References in corpus (2)

• High Performance Metal-Insulator-Graphene Diodes for Radio Frequency Power Detection Application
• Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Cited by in corpus (9)

• Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
• Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
• Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity
• A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
• Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
• Zero Bias Power Detector Circuits based on MoS${}_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
• Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes
• GFET Asymmetric Transfer Response Analysis through Access Region Resistances
• Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications