84 citations · 231 across the 8 of their papers we have counts for
8 papers
Effect of ion irradiation on superconducting thin films
Katja Kohopää, Alberto Ronzani, Robab Najafi Jabdaraghi +8
We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used supercon…
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
Mário Ribeiro, Giulio Gentile, Alain Marty +12
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Alth…
Flexible One-Dimensional Metal-Insulator-Graphene Diode
Zhenxing Wang, Burkay Uzlu, Mehrdad Shaygan +8
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1…
Scale-invariant large nonlocality in polycrystalline graphene
Mário Ribeiro, Stephen R. Power, Stephan Roche +2
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom…
Photodoping-driven crossover in low-frequency noise in MoS2 transistors
Isidoro Martinez, Mario Ribeiro, Pablo Andres +3
Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their perform…
Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
Wenjing Yan, Edurne Sagasta, Mário Ribeiro +3
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic dev…
Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions
Subir Parui, Mário Ribeiro, Ainhoa Atxabal +5
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-fr…
Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy
Subir Parui, Ainhoa Atxabal, Mário Ribeiro +5
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures belo…