53 citations · 212 across the 7 of their papers we have counts for
7 papers
CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors
Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…
Flexible One-Dimensional Metal-Insulator-Graphene Diode
Zhenxing Wang, Burkay Uzlu, Mehrdad Shaygan +8
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1…
Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
Enrique G. Marin, Damiano Marian, Marta Perucchini +2
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Fiel…
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a ) with voltage-controlled spin polarization operating at room…
Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
Vikram Passi, Amit Gahoi, Enrique G. Marin +5
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to…
First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to bu…