53 citations · 212 across the 7 of their papers we have counts for
5 papers · 1 filter
CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors
Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…
Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
Enrique G. Marin, Damiano Marian, Marta Perucchini +2
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Fiel…
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a ) with voltage-controlled spin polarization operating at room…
First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to bu…
Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS
Damiano Marian, Elias Dib, Teresa Cusati +4
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phase…