Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

Abstract

We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the total current can be modulated by a differential tuning of the transmission properties, and of the occupation of edge states of different spin, via the application of an in-plane electric field. We demonstrate device operation using ab-initio and quantum transport simulations.

15 pages, 5 figures

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
• Graphene Spintronics
• Magnetism in Graphene Induced by Single-Atom Defects
• Emergence of magnetism in graphene materials and nanostructures
• Tunneling Spin Injection into Single Layer Graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Performance of arsenene and antimonene double-gate MOSFETs from first principles