Epitaxial Growth of Two-Dimensional Stanene

Abstract

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.

20 pages, 4 figures

References in corpus (4)

• Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
• Bulk Band Structure of Bi${}_2$Te${}_3$

Cited by in corpus (255)

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