Topological phase transitions in the photonic spin Hall effect
arXiv:1709.02057 · doi:10.1103/PhysRevLett.119.147401
Abstract
The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, material properties, and features non-trivial topological properties. We discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carries, providing a unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.
arXiv commentEditorially approved for publication in Physical Review Letters 5 pages, 4 figures
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- Wide-angle giant photonic spin Hall effect
- Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime
- Probing topological phase transitions via quantum reflection in the graphene family materials
- Coherent control of photonic spin Hall effect in a Cavity
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- Photonic Spin Hall Effect using bilayer Graphene in Nano Optomechanical Cavities
- Controlling electric and magnetic Purcell effects in phosphorene via strain engineering
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- Microwave Controlled Photonic Spin Hall Effect in Atomic System and Microwave Electrometry
- Crossover of spin Hall to quantum anomalous Hall effect in PbC/MnSe heterostructures