Topological Phase Transitions and Quantum Hall Effect in the Graphene Family
arXiv:1712.01419 · doi:10.1103/PhysRevB.97.165426
Abstract
Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers, and static electric or magnetic fields. We show how topological features arising from photo-induced phase transitions and the quantum Hall effect coexist in these materials, and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures about the various phase transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated to one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.
8 pages, 6 figures
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- Tuning of Bilayer Graphene Heterostructure by Horizontally Incident Circular Polarized Light
- Floquet states of Valley-Polarized Metal with One-way Spin or Charge Transport in Zigzag Nanoribbons
- Casimir forces in the flatland: interplay between photo-induced phase transitions and quantum Hall physics
- Localized Floquet states in gated bilayer graphene induced by a focused optical beam with orbital angular momentum
- Optical manipulation of the topological phase in ZrTe5 revealed by time- and angle-resolved photoemission
- Emerging nonlinear Hall effect in Kane-Mele two-dimensional topological insulators