Possibility of Realizing Quantum Spin Hall Effect at Room Temperature in Stanene/Al2O3(0001)

Abstract

Two-dimensional quantum spin Hall (QSH) insulators with reasonably wide band gaps are imperative for the development of various innovative technologies. Through systematic density functional calculations and tight-binding simulations, we found that stanene on α-alumina surface may possess a sizeable topologically nontrivial band gap (~0.25 eV) at the Γ point. Furthermore, stanene is atomically bonded to but electronically decoupled from the substrate, providing high structural stability and isolated QSH states to a large extent. The underlying physical mechanism is rather general, and this finding may lead to the opening of a new vista for the exploration of QSH insulators for room temperature device applications.

References in corpus (11)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Spin-orbit gap of graphene: First-principles calculations
• Time Reversal Polarization and a Z_2 Adiabatic Spin Pump
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
• Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
• Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Cited by in corpus (11)

• Atomically Thin Quantum Spin Hall Insulators
• New class of 3D topological insulator in double perovskite
• Multiple odd-frequency superconducting states in buckled quantum spin Hall insulators with time-reversal symmetry
• Surface Piezoelectricity of (0001) Sapphire
• Prediction of giant and ideal Rashba-type splitting in ordered alloy monolayers grown on a polar surface
• Searching for Large-gap Quantum Spin Hall Insulators: Boron-Nitride/(Pb, Sn)/α-Al2O3 Sandwich Structures
• Epitaxial binding and strain effects of monolayer stanene on the Al${}_2$O${}_3$(0001) surface
• Realizing robust large-gap quantum spin Hall state in 2D HgTe monolayer on insulating substrate
• High-buckled R3 stanene with topologically nontrivial energy gap
• A general formulation for the magnetic oscillations in two dimensional systems
• Temperature effect on the magnetic oscillations in 2D materials