First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

Abstract

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is based on first-principle calculations and multi-scale transport simulations to assess devices performance against industry requirements and their robustness with respect to technological issues like line edge roughness, detrimental for nanoribbons. We will show that edges states are robust with respect to the presence of non-idealities (e.g., atoms vacancies at the edges), and that 1D-channel TFETs exhibit interesting potential for digital applications and room for optimization in order to improve the Ion/Ioff at the levels required by the ITRS, while opening a path for the exploration of new device concepts at the ultimate scaling limits.

arXiv comment22 pages, 9 figures

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Cited by in corpus (4)

• Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
• Graphene Nanoribbons Under Axial Compressive and Point Tensile Stresses
• Strained topological insulator spin field effect transistor
• Electronic Transport and Thermopower in 2D and 3D Heterostructures--A Theory Perspective