activity
20162020
most citedQuantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices

25 citations · 51 across the 4 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2020

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source

Enrique G. Marin, Damiano Marian, Marta Perucchini +2

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Fiel…

cond-mat.mes-hall20196 cited

Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate

Marta Perucchini, Enrique G. Marin, Damiano Marian +2

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling prop…

cond-mat.mes-hall201920 cited

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1

We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a ) with voltage-controlled spin polarization operating at room…

cond-mat.mes-hall2018

Laser-beam patterned topological insulating states on thin semiconducting MoS2

H. Mine, A. Kobayashi, T. Nakamura +10

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic…

cond-mat.mes-hall2018

First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to bu…

cond-mat.mes-hall2018

Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS

Damiano Marian, Elias Dib, Teresa Cusati +4

In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phase…