53 citations · 287 across the 22 of their papers we have counts for
24 papers
Multiscale modelling of nanoscaled FETs based on 2D ferroelectric materials
Alejandro Toral-Lopez, Michele Virgilio, Gianluca Fiori +1
Ferroelectric materials are highly attractive for low-power, high-speed electronics and emerging neuromorphic computing architectures. However, the severe physical scaling limits o…
Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices
Patrizio Graziosi, Damiano Marian, Andrea Tomadin +7
The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-I…
Hopping transport regimes and dimensionality transition: a unified Monte Carlo Random Resistor Network approach
Alejandro Toral-Lopez, Damiano Marian, Gianluca Fiori
Hopping transport, characterized by carrier tunneling between localized states, is a key mechanism in disordered materials such as organic semiconductors, perovskites, nitride allo…
Optical spin pumping in silicon
Stefano Achilli, Damiano Marian, Mario Lodari +5
The generation of an out-of-equilibrium population of spin-polarized carriers is a keystone process for quantum technologies and spintronics alike. It can be achieved through the s…
Direct Dark Matter searches with Metal Halide Perovskites
Davide Baiocco, Damiano Marian, Giulio Marino +3
Polar materials with optical phonons in the meV range are excellent candidates for both dark matter direct detection (via dark photon-mediated scattering) and light dark matter abs…
Roadmap on Quantum Magnetic Materials
Antonija Grubišić-Čabo, Marcos H. D. Guimarães, Dmytro Afanasiev +36
Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of…
Strain-induced valley transport in CrBr/WSe/CrBr van der Waals heterostructure
David Soriano, Damiano Marian, Prabhat Dubey +1
Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as t…
CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors
Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…
Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
Enrique G. Marin, Damiano Marian, Marta Perucchini +2
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Fiel…
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate
Marta Perucchini, Enrique G. Marin, Damiano Marian +2
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling prop…
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a ) with voltage-controlled spin polarization operating at room…
Laser-beam patterned topological insulating states on thin semiconducting MoS2
H. Mine, A. Kobayashi, T. Nakamura +10
Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic…
First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone +1
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to bu…
Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS
Damiano Marian, Elias Dib, Teresa Cusati +4
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phase…
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices
E. Colomés, Z. Zhan, D. Marian +1
Without access to the full quantum state, modeling dissipation in an open system requires approximations. The physical soundness of such approximations relies on using realistic mi…
How does Quantum Uncertainty Emerge from Deterministic Bohmian Mechanics?
Albert Solé, Xavier Oriols, Damiano Marian +1
Bohmian mechanics is a theory that provides a consistent explanation of quantum phenomena in terms of point particles whose motion is guided by the wave function. In this theory, t…
BITLLES: Electron Transport Simulation with Quantum Trajectories
Guillermo Albareda, Damiano Marian, Abdelilah Benali +3
After the seminal work of R. Landauer in 1957 relating the electrical resistance of a conductor to its scattering properties, much progress has been made in our ability to predict…
On the noise induced by the measurement of the THz electrical current in quantum devices
Damiano Marian, Nino Zanghì, Xavier Oriols
From a quantum point of view, it is mandatory to include the measurement process when predicting the time-evolution of a quantum system. In this paper, a model to treat the measure…
Time-dependent simulation of particle and displacement currents in THz graphene transistors
Z. Zhan, E. Colomès, A. Benali +2
Although time-independent models provide very useful dynamical information with a reduced computational burden, going beyond the quasi-static approximation provides enriched inform…
Quantum noise with exchange and tunneling: Predictions for a two-particle scattering experiment with time-dependent oscillatory potentials
Enrique Colomés, Damiano Marian, Xavier Oriols
Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously…
Weak Values from Displacement Currents in Multiterminal Electron Devices
Damiano Marian, Nino Zanghì, Xavier Oriols
Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) phot…
Can the wave function in configuration space be replaced by single-particle wave functions in physical space?
Travis Norsen, Damiano Marian, Xavier Oriols
The ontology of Bohmian mechanics includes both the universal wave function (living in 3N-dimensional configuration space) and particles (living in ordinary 3-dimensional physical…
Quantum Noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices
Damiano Marian, Enrique Colomés, Zhen Zhan +1
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-…
Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources
D. Marian, E. Colomés, X. Oriols
Two-particle scattering probabilities in tunneling scenarios with exchange interaction are analyzed with quasi-particle wave packets. Two initial one-particle wave packets (with op…