Laser-beam patterned topological insulating states on thin semiconducting MoS2

Abstract

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D transition metal dichalcogenides (TMDCs) have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T'-phase embedded into the 2H-phase of thin semiconducting molybdenum-disulfide (MoS2) by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T' phases.

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Cited by in corpus (5)

• Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2
• Symmetry driven topological phases in XAgBi (X=Ba,Sr): An Ab-initio hybrid functional calculations
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Determination of Out-of-plane Spin Polarization of Topological Surface States by Spin Hall Effect Tunneling Spectroscopy
• Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS${}_2$