Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2
arXiv:2006.08125 · doi:10.1038/s43246-020-00050-w
Abstract
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.
References in corpus (22)
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
- Nonlocal edge state transport in the quantum spin Hall state
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Quantized Majorana conductance
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
- Ballistic Majorana nanowire devices
- Spin polarization of the quantum spin Hall edge states
- Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
- A large energy-gap oxide topological insulator based on the superconductor BaBiO3
- Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe
- Signature of large-gap quantum spin Hall state in the layered mineral jacutingaite
- Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
- Critical comparison of electrode models in density functional theory based quantum transport calculations
- Laser-beam patterned topological insulating states on thin semiconducting MoS2
- Magnetotransport in disordered two-dimensional topological insulators: signatures of charge puddles
- Spin-orbit interaction in Pt or Bi2Te3 nanoparticle-decorated graphene realized by a nanoneedle method