Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS${}_2$

Abstract

In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS${}_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and low power applications. Performance potential has been evaluated by means of detailed multi-scale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor.

arXiv comment7 pages, 8 figures

References in corpus (4)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Van der Waals heterostructures
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Integrated Circuits Based on Bilayer MoS2 Transistors

Cited by in corpus (11)

• Quantum engineering of transistors based on 2D materials heterostructures
• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
• Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Magnetoexcitons in transition-metal dichalcogenides monolayers, bilayers, and van der Waals heterostructures
• GFET Asymmetric Transfer Response Analysis through Access Region Resistances
• Computational methods for 2D materials modelling
• Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions
• Effect of Interfacial Defects on the Electronic Properties of MoS${}_2$ Based Lateral T-H Heterophase Junctions
• Assessing the role of quantum effects in 2D heterophase MoTe${}_2$ field effect transistors
• Strained 2D TMD lateral heterojunctions via grayscale thermal-Scanning Probe Lithography