CrCTe: Computational design of a robust two-dimensional anti-ferromagnetic semiconductor
arXiv:1707.00878 · doi:10.1103/PhysRevB.96.045404
Abstract
Using density functional theory calculations we establish the hitherto unknown compound CrCTe to be a stable anti-ferromagnetic semiconductor in the R crystal structure with an indirect fundamental gap . Successive layers in the bulk compound are weakly bound by van der Waals forces so that individual layers can be easily exfoliated. A monolayer of CrCTe is also an anti-ferromagnetic semiconductor. The monolayer is structurally stable over a large range of compressive and tensile strains, and the anti-ferromagnetic state is robust over this strain range. Band gap of the monolayer can be tuned by as much as 50% by applying strain in this range.
arXiv comment14 pages, 11 figures
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