Multimechanism quantum anomalous Hall and Chern number tunable states in germanene (silicene, stanene)/BiTe heterostructures
arXiv:2401.08490 · doi:10.1103/PhysRevB.109.235132
Abstract
By constructing germanene (silicene, stanene)/BiTe ( = 3d-transition elements) heterostructures, we discovered and designed multimechanism quantum-anomalous-Hall (QAH) systems, including -based QAH, --connected QAH, and valley-polarized - or -based QAH states via first-principle computations. The unique systems possess a global gap and tunable Chern number. The coexisting conventional -based QAH state of BiTe and valley-polarized ()-based QAH state of germanene (silicene, stanene), with opposite chirality, can interact with each other. Adjusting magnetic configurations of BiTe-layers not only switch on (off) the QAH conductance, but also modulate Chern numbers exactly. For example, the germanene/bilayer-NiBiTe possesses the Chern number in ferromagnetic couplings and in antiferromagnetic couplings. The novel multimechanism QAH insulators, which are achievable in experiments, provide a new approach to spintronics and valleytronics based on topological states of matter.
9 pages, 4 figures
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