High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels

Abstract

The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 starts the research on topological quantum states and lays the foundation of topology in physics. Afterwards, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C|=1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C>1). Here, we report the experimental discovery of high-Chern-number QHE (C=2) without Landau levels and C=1 Chern insulator state displaying nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.

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• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
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• Prediction and observation of the first antiferromagnetic topological insulator
• Intrinsic magnetic topological insulators in van der Waals layered MnBi${}_2$Te${}_4$-family materials
• Topological axion states in magnetic insulator MnBi${}_2$Te${}_4$ with the quantized magnetoelectric effect
• Experimental realization of an intrinsic magnetic topological insulator
• Antiferromagnetic topological insulators
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
• Quantized Anomalous Hall Effect in Two-Dimensional Ferromagnets - Quantum Hall Effect from Metal -
• Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• Möbius Insulator and Higher-Order Topology in MnBi${}_{2n}$Te${}_{3n+1}$
• Quantum Anomalous Hall Effect with Higher Plateaus
• Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBi${}_2$Te${}_4$
• Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic properties
• Engineering quantum anomalous Hall phases with orbital and spin degrees of freedom

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