Facet dependent surface energy gap on magnetic topological insulators
arXiv:2201.02769 · doi:10.1103/PhysRevB.105.165130
Abstract
Magnetic topological insulators (MnBiTe)(BiTe) () are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the BiTe layer introduces versatility to engineer electronic and magnetic properties. However, whether surface states on the BiTe terminated facet are gapless or gapped is debated, and its consequences in thin-film properties are rarely discussed. In this work, we find that the BiTe terminated facets are gapless for compounds by calculations. Despite that the surface BiTe (one layer or more) and underlying MnBiTe layers hybridize and give rise to a gap, such a hybridization gap overlaps with bulk valence bands, leading to a gapless surface after all. Such a metallic surface poses a fundamental challenge to realize QAHE or AI, which requires an insulating gap in thin films with at least one BiTe surface. In theory, the insulating phase can still be realized in a film if both surfaces are MnBiTe layers. Otherwise, it requires that the film thickness is less than 1020 nm to push down bulk valence bands via the size effect. Our work paves the way to understand surface states and design bulk-insulating quantum devices in magnetic topological materials.
arXiv comment10 pages for the main text (4 figures) and 8 pages for supplemental material
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