Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Abstract

Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.

arXiv comment22 pages, 4 figures

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• Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\mathbf{MnB}{\mathbf{i}}_4\mathbf{T}{\mathbf{e}}_7$ and $\mathbf{MnB}{\mathbf{i}}_6\mathbf{T}{\mathbf{e}}_{10}$
• Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7
• Distinct magnetic gaps between antiferromagnetic and ferromagnetic orders driven by surface defects in the topological magnet MnBi2Te4
• Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators
• Large anomalous Hall effect induced by weak ferromagnetism in the noncentrosymmetric antiferromagnet $\mathrm{Co}{\mathrm{Nb}}_3{\mathrm{S}}_6$
• Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi${}_8$Te${}_{13}$
• Growth, characterization and Chern insulator state in MnBi${}_2$Te${}_4$ via the chemical vapor transport method
• Intrinsic Magnetic Topological Materials
• Strongly anisotropic spin dynamics in magnetic topological insulators
• Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification
• Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states
• Evolution of Berry curvature and reentrant quantum anomalous Hall effect in an intrinsic magnetic topological insulator
• On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family
• Magnetic warping in topological insulators
• Finite-size Topology
• Momentum-inversion symmetry breaking on the Fermi surface of magnetic topological insulators
• Transfer Learning Application of Self-supervised Learning in ARPES
• Unusual dynamic susceptibility arising from soft ferromagnetic domains in MnBi8Te13 and Sb-doped MnBi2nTe3n+1 (n=2, 3)
• Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures
• Facet dependent surface energy gap on magnetic topological insulators
• Novel magnetic topological insulator FeBi${}_2$Te${}_4$ with controllable topological quantum phase
• Reconstructing the wavefunction of magnetic topological insulators MnBi2Te4 and MnBi4Te7 using spin-resolved photoemission
• Fate of surface gaps in magnetic topological insulators
• Defect-induced displacement of topological surface state in quantum magnet MnBi${}_2$Te${}_4$
• Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation