Growth, characterization and Chern insulator state in MnBi${}_2$Te${}_4$ via the chemical vapor transport method

Abstract

As the first intrinsic antiferromagnetic topological insulator, MnBi${}_2$Te${}_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi${}_2$Te${}_4$, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi${}_2$Te${}_4$ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi${}_2$Te${}_4$ is marked with higher Mn occupancy on the Mn site, slightly higher Mn${}_{\mathrm{Bi}}$ antisites, smaller carrier concentration and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm${}^2$V$\cdot$s in MnBi${}_2$Te${}_4$ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Our study provides a new route to obtain high-quality single crystals of MnBi${}_2$Te${}_4$ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous hall effect, etc.

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References in corpus (4)

• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Crystal growth and magnetic structure of MnBi2Te4
• Layer Hall effect in a 2D topological Axion antiferromagnet
• Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)

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• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Self-selecting vapor growth of transition metal halide single crystals
• On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family
• Anomalous Second Harmonic Generation from Atomically Thin MnBi2Te4
• Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4
• Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4
• Relationship among Structural, Disordered, Magnetism and Band Topology in MnSb2Te4(Sb2Te3)n Family
• Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation