Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

Abstract

We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.

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• Three-Dirac-fermion approach to unexpected universal gapless surface states of van der Waals magnetic topological insulators
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• Facet dependent surface energy gap on magnetic topological insulators
• Stacking-induced Chern insulator
• Thermal Transport Properties of Magnons on the $\alpha$-T${}_3$ Lattice
• Direct observation of chiral edge current at zero magnetic field in odd-layer MnBi${}_2$Te${}_4$
• A mesoscopic device for a realization of the Topological Kondo effect
• Quantum theory for edge current and noise in two-dimensional topological superconductors
• Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation
• Defect-induced displacement of topological surface state in quantum magnet MnBi${}_2$Te${}_4$