Scaling Behavior of the Quantum Phase Transition from a Quantum Anomalous Hall Insulator to an Axion Insulator
arXiv:1909.04831 · doi:10.1038/s41467-020-18312-z
Abstract
The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker-Coddington network model. We extract a critical exponent k~ 0.38 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker-Coddington model at v ~ 2.6, rather than the generally-accepted value of 2.33.
24 pages, 4 figures, comments are welcome
References in corpus (8)
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
- Tailoring tricolor structure of magnetic topological insulator for robust axion insulator
- Critical exponent for the quantum Hall transition
- Observation of the quantum-anomalous-Hall insulator to Anderson insulator quantum phase transition and its scaling behavior
- Finite Size Effects and Irrelevant Corrections to Scaling near the Integer Quantum Hall Transition
- Wave function multifractality and dephasing at metal-insulator and quantum Hall transitions
Cited by in corpus (18)
- Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films
- Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
- Critical Behavior and Universal Signature of an Axion Insulator State
- Progress and prospects in the quantum anomalous Hall effect
- Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
- Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures
- Mass media and its impact on opinion dynamics of the nonlinear -voter model
- Surface Charge Induced Dirac Band Splitting in a Charge Density Wave Material (TaSe4)2I
- Spectral features of magnetic domain walls on surface of 3D topological insulators
- Topological Phase Transitions Induced by Disorder in Magnetically Doped (Bi, Sb)Te Thin Films
- Evidence for Half-Quantized Chiral Edge Current in a C = 1/2 Parity Anomaly State
- Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness
- Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers
- Quantum Hall criticality in an amorphous Chern insulator
- Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3
- Spin-orbit torque switching of Néel order in band-inverted antiferromagnetic bilayer MnBiTe
- Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr(BiSb)Te and V(BiSb)Te Films
- Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators