Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3

Abstract

We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed.

16 pages, 4 figures. The following article has been accepted by Applied Physics Letter. After it is published, it will be found at https://pubs.aip.org/aip/apl

References in corpus (33)

• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
• Intrinsic quantized anomalous Hall effect in a moiré heterostructure
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
• Quantum anomalous Hall effect from intertwined moiré bands
• Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
• Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr${}_x$(Bi${}_{0.1}$Sb${}_{0.9}$)${}_{2-x}$Te${}_3$
• Visualization of superparamagnetic dynamics in magnetic topological insulators
• Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state
• Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering
• Quantized chiral edge conduction on reconfigurable domain walls of a magnetic topological insulator
• Universal Scaling of Quantum Anomalous Hall Plateau Transition
• Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state
• Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
• Concurrence of Quantum Anomalous Hall and Topological Hall Effects in Magnetic Topological Insulator Sandwich Heterostructures
• Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics
• Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb${}_2$Te${}_3$
• Direct evidence of ferromagnetism in a quantum anomalous Hall system
• Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
• Current-induced breakdown of the quantum anomalous Hall effect
• Effects of random domains on the zero Hall plateau in quantum anomalous Hall effect
• Scaling Behavior of the Quantum Phase Transition from a Quantum Anomalous Hall Insulator to an Axion Insulator
• Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
• Bulk dissipation in the quantum anomalous Hall effect
• Electrical Switching of the Edge Current Chirality in Quantum Anomalous Hall Insulators
• Current scaling of the topological quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator
• High temperature, gate-free quantum anomalous Hall effect with an active capping layer
• Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers

Cited by in corpus (1)

• Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ and V${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ Films