Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces

Abstract

We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards atomically flat surface. GaAs/AlGaAs quantum wells realized on optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.

References in corpus (7)

• Colloquium: Cluster growth on surfaces - densities, size distributions and morphologies
• Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells
• Symmetric quantum dots as efficient sources of highly entangled photons
• Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
• Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells
• Electrical suppression of spin relaxation in GaAs(111)B Quantum Wells
• Ambipolar spin transport in (111) GaAs quantum wells

Cited by in corpus (7)

• High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
• Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
• Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A
• Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
• Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
• InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A
• Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3