80 citations · 229 across the 13 of their papers we have counts for
14 papers
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Matteo Canciani, Stefano Vichi, Oksana Koplak +2
A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on…
Conduction band resonant states absorption for quantum dot infrared detectors operating at room temperature
Stefano Vichi, Shigeo Asahi, Sergio Bietti +4
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve signific…
Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
Andrea Barbiero, Artur Tuktamyshev, Geoffrey Pirard +9
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum net…
Optically controlled dual-band quantum dot infrared photodetector
Stefano Vichi, Sergio Bietti, Francesco Basso Basset +3
We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCD…
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
A. Tuktamyshev, A. Fedorov, S. Bietti +8
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed…
Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…
High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
Sergio Bietti, Francesco Basso Basset, Artur Tuktamyshev +3
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of h…
Metal Droplet Effects on the Composition of Ternary Nitrides
Mani Azadmand, Stefano Vichi, Sergio Bietti +7
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong red…
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
Francesco Basso Basset, Sergio Bietti, Artur Tuktamyshev +3
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to se…
Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Mani Azadmand, Luca Barabani, Sergio Bietti +7
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We f…
High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
Francesco Basso Basset, Sergio Bietti, Marcus Reindl +7
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of…
Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
Luca Esposito, Sergio Bietti, Alexey Fedorov +2
We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the gro…
Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Nicola Dotti, Francesco Sarti, Sergio Bietti +7
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-p…
A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory
Kristofer Reyes, Peter Smereka, Denis Nothern +5
We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mecha…