Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
arXiv:2101.12237 · doi:10.1063/5.0045776
Abstract
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 μm telecom O-band with the fine structure splitting as low as 16 μeV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
arXiv comment13 pages, 4 figures
References in corpus (11)
- Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
- Strain-Tunable GaAs Quantum dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand
- Semiconductor devices for entangled photon pair generation: a review
- A quantum light emitting diode for the standard telecom window around 1550 nm
- Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review
- Symmetric quantum dots as efficient sources of highly entangled photons
- Universal growth scheme for entanglement-ready quantum dots
- High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
- Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
- Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 m
- Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A