activity
20192026
most citedSpectral broadening in self-assembled GaAs quantum dots with narrow size distribution

24 citations · 55 across the 8 of their papers we have counts for

collaborators

8 papers

quant-ph2026

Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band

Rabbia Tahir, Paweł Wyborski, Artur Tuktamyshev +4

Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum c…

physics.ins-det2024

Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

Matteo Canciani, Stefano Vichi, Oksana Koplak +2

A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on…

physics.optics2024

Conduction band resonant states absorption for quantum dot infrared detectors operating at room temperature

Stefano Vichi, Shigeo Asahi, Sergio Bietti +4

Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve signific…

quant-ph2022★ 9 cited

Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate

Andrea Barbiero, Artur Tuktamyshev, Geoffrey Pirard +9

The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum net…

physics.app-ph2021

Optically controlled dual-band quantum dot infrared photodetector

Stefano Vichi, Sergio Bietti, Francesco Basso Basset +3

We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCD…

cond-mat.mtrl-sci2021★ 22 cited

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

A. Tuktamyshev, A. Fedorov, S. Bietti +8

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed…