activity
20022020
most citedReentrant behavior of the density vs temperature of indium islands on GaAs(111)A

6 citations · 6 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci20206 cited

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…

physics.app-ph2019

Metal Droplet Effects on the Composition of Ternary Nitrides

Mani Azadmand, Stefano Vichi, Sergio Bietti +7

We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong red…

cond-mat.mtrl-sci2017

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Mani Azadmand, Luca Barabani, Sergio Bietti +7

We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We f…

physics.chem-ph2002

As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy

Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3

As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed sim…

physics.atm-clus2002

Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy

Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3

Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection hi…