activity
19962023
most citedDroplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices

238 citations · 867 across the 21 of their papers we have counts for

collaborators

22 papers

quant-ph2023★ 8 cited

Design and simulation of a transmon qubit chip for Axion detection

Roberto Moretti, Hervè Atsè Corti, Danilo Labranca +54

Quantum Sensing is a rapidly expanding research field that finds one of its applications in Fundamental Physics, as the search for Dark Matter. Devices based on superconducting qub…

quant-ph2022★ 9 cited

Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate

Andrea Barbiero, Artur Tuktamyshev, Geoffrey Pirard +9

The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum net…

physics.optics2021★ 238 cited

Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices

Massimo Gurioli, Zhiming Wang, Armando Rastelli +2

The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over l…

physics.app-ph2021

Optically controlled dual-band quantum dot infrared photodetector

Stefano Vichi, Sergio Bietti, Francesco Basso Basset +3

We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCD…

cond-mat.mtrl-sci2021★ 22 cited

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

A. Tuktamyshev, A. Fedorov, S. Bietti +8

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed…

cond-mat.mtrl-sci2020★ 6 cited

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…