238 citations · 867 across the 21 of their papers we have counts for
8 papers · 1 filter
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
A. Tuktamyshev, A. Fedorov, S. Bietti +8
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed…
Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Mani Azadmand, Tomas Auzelle, Jonas Lähnemann +7
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionall…
Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Mani Azadmand, Luca Barabani, Sergio Bietti +7
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We f…
Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
Luca Esposito, Sergio Bietti, Alexey Fedorov +2
We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the gro…
A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory
Kristofer Reyes, Peter Smereka, Denis Nothern +5
We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mecha…