1 citations · 1 across the 5 of their papers we have counts for
5 papers
Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band
Rabbia Tahir, Paweł Wyborski, Artur Tuktamyshev +4
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum c…
Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters
Karolina E. Połczyńska, Paweł Wyborski, Michał Gawełczyk +4
Significant progress in quantum light sources for quantum communication applications requires reproducible and symmetric quantum emitters acting as single-photon sources capable of…
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Matteo Canciani, Stefano Vichi, Oksana Koplak +2
A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on…
Conduction band resonant states absorption for quantum dot infrared detectors operating at room temperature
Stefano Vichi, Shigeo Asahi, Sergio Bietti +4
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve signific…
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…