24 citations · 61 across the 7 of their papers we have counts for
8 papers
Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band
Rabbia Tahir, Paweł Wyborski, Artur Tuktamyshev +4
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum c…
Conduction band resonant states absorption for quantum dot infrared detectors operating at room temperature
Stefano Vichi, Shigeo Asahi, Sergio Bietti +4
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve signific…
Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
Andrea Barbiero, Artur Tuktamyshev, Geoffrey Pirard +9
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum net…
Optically controlled dual-band quantum dot infrared photodetector
Stefano Vichi, Sergio Bietti, Francesco Basso Basset +3
We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCD…
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
A. Tuktamyshev, A. Fedorov, S. Bietti +8
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed…
Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…
High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
Sergio Bietti, Francesco Basso Basset, Artur Tuktamyshev +3
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of h…
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
Francesco Basso Basset, Sergio Bietti, Artur Tuktamyshev +3
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to se…