A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory

Abstract

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.

References in corpus (3)

• Optical transitions in quantum ring complexes
• Picosecond Nonlinear Relaxation of Photoinjected Carriers in a Single GaAs/AlGaAs Quantum Dot
• A Hybrid Monte Carlo Method for Surface Growth Simulations

Cited by in corpus (7)

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• High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
• Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
• Mechanisms of GaN quantum dot formation during nitridation of Ga droplets
• Problem-fluent models for complex decision-making in autonomous materials research
• Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
• Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations