Electrical Switching of the Edge Current Chirality in Quantum Anomalous Hall Insulators

Abstract

A quantum anomalous Hall (QAH) insulator is a topological state of matter, in which the interior is insulating but electrical current flows along the edges of the sample, in either clockwise (right-handed) or counter-clockwise (left-handed) direction dictated by the spontaneous magnetization orientation. Such chiral edge current (CEC) eliminates any backscattering, giving rise to quantized Hall resistance and zero longitudinal resistance. In this work, we fabricate mesoscopic QAH sandwich (i.e. magnetic topological insulator (TI)/TI/magnetic TI) Hall bar devices and succeed in switching the CEC chirality in QAH insulators through spin-orbit torque (SOT) by applying a current pulse and suitably controlled gate voltage. The well-quantized QAH states with opposite CEC chiralities are demonstrated through four- and three-terminal measurements before and after SOT switching. Our theoretical calculations show that the SOT that enables the magnetization switching can be generated by both bulk and surface carriers in QAH insulators, in good agreement with experimental observations. Current pulse-induced switching of the CEC chirality in QAH insulators will not only advance our knowledge in the interplay between magnetism and topological states but also expedite easy and instantaneous manipulation of the QAH state in proof-of-concept energy-efficient electronic and spintronic devices as well as quantum information applications.

arXiv comment24 pages, 5 figures, comments are welcome

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Cited by in corpus (8)

• Progress and prospects in the quantum anomalous Hall effect
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• Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3
• Spin-orbit torque switching of Néel order in band-inverted antiferromagnetic bilayer MnBi${}_2$Te${}_4$
• Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching
• Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ and V${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ Films