Tuning Chern Number in Quantum Anomalous Hall Insulators

Abstract

The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.

Accepted version (27 pages, 4 figures). Comments are welcome

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• Colloquium: Quantum anomalous Hall effect
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• Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
• Tunable quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene
• Quantum sensing and imaging of spin-orbit-torque-driven spin dynamics in noncollinear antiferromagnet Mn3Sn
• Topological Phases in AB-Stacked MoTe${}_2$/WSe${}_2$: ${\mathbb{Z}}_2$ Topological Insulators, Chern Insulators, and Topological Charge Density Waves
• 2024 roadmap on 2D topological insulators
• Simulation of interaction-induced chiral topological dynamics on a digital quantum computer
• Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
• Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
• Simulating Chern insulators on a superconducting quantum processor
• Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4
• Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators
• Progress and prospects in the quantum anomalous Hall effect
• Floquet engineering of magnetic topological insulator MnBi${}_2$Te${}_4$ films
• Creation of Chiral Interface Channels for Quantized Transport in Magnetic Topological Insulator Multilayer Heterostructures
• Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators
• Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides
• The Casimir effect in topological matter
• Observation of Large-Number Corner Modes in $\mathbb{Z}$-class Higher-Order Topolectrical Circuits
• Light-induced phase crossovers in a quantum spin Hall system
• Electrical Switching of the Edge Current Chirality in Quantum Anomalous Hall Insulators
• Topological features of Haldane model on a dice lattice: role of flat band on transport properties
• Engineering topological phases of any winding and Chern numbers in extended Su-Schrieffer-Heeger models
• Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures
• Rules for dissipationless topotronics
• Quasicrystalline second-order topological semimetals
• Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI3
• Large-$N$ Chern insulators: lattice field theory and quantum simulation approaches to correlation effects in the quantum anomalous Hall effect
• High-Chern number phase in the topological insulator multilayer structures
• Isolated flat bands in an interlocking-circles lattice
• Visualizing higher-fold topology in chiral crystals
• Persistence of Monoclinic Crystal Structure in Three-Dimensional Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake without Structural Phase transition
• Novel topological phases of a semi-Dirac Chern insulator in presence of extended range hopping
• The Layer Hall Effect without External Electric Field
• Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping
• Spin-polarized antichiral exciton-polariton edge states
• A Dirac-fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers
• Floquet topological phases with large winding number
• Stacking-induced Chern insulator
• Generating and detecting topological phases with higher Chern number
• Dynamical Fragile Topology in Floquet Crystals
• Quantum anomalous Hall effects controlled by chiral domain walls
• Layer-Dependent Quantum Anomalous Hall Effect in Rhombohedral Graphene
• Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films
• Topological field-effect transistor with quantized ON/OFF conductance of helical/chiral dislocation states
• Metallic Quantized Anomalous Hall Effect without Chiral Edge States
• Effects of Boundary on Orbital Magnetization for a Bilayer System with Different Chern Numbers
• Dirac Fermions and Topological Phases in Magnetic Topological Insulator Films
• Dissipation and dephasing in quantum Hall interferometers
• Effect of the external fields in high Chern number quantum anomalous Hall insulators
• Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness
• Chiral topological superconducting state with Chern number $\mathcal{C}=-2$ in Pb${}_3$Bi/Ge(111)
• Wannier center spectroscopy to identify boundary-obstructed topological insulators
• Band engineered bilayer Haldane model: Evidence of multiple topological phase transitions
• Chiral edge state coupling theory of transport in quantum anomalous Hall insulators
• Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers
• Arrays of one-dimensional conducting channels in minimally twisted bilayer graphene
• Tunable Majorana corner states driven by superconducting phase bias in a vertical Josephson junction
• Quantum Phases in Twisted Homobilayer Transition Metal Dichalcogenides
• Orbital Magnetization under an Electric Field and Orbital Magnetoelectric Polarizabilty for a Bilayer Chern System
• Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators
• High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBi${}_2$Te${}_4$ thin films
• Topological phase diagram of the Haldane model on a Bishamon-kikko--honeycomb lattice
• Efficient Quantum Transduction Using Anti-Ferromagnetic Topological Insulators
• Trigonal warping effects on optical properties of anomalous Hall materials
• Revisiting magnetic exchange interactions in transition metal doped Bi${}_2$Se${}_3$ using DFT+MFT
• Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch
• Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers
• Spin-orbit torque switching of Néel order in band-inverted antiferromagnetic bilayer MnBi${}_2$Te${}_4$
• Kerr and Faraday rotations in topological flat and dispersive band structures
• Strain-engineering quantum anomalous Hall effect in janus MnBi2SexTe4-x monolayers
• Quantum anomalous Hall effect in chiral semimetals
• High Chern number phase in topological insulator multilayer structures: a Dirac cone model study
• Floquet topological phases with high Chern numbers in a periodically driven extended Su-Schrieffer-Heeger model
• Quantum anomalous Hall effect with high Chern number in two dimensional ferromagnets Ti2TeSO
• Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching
• Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators
• Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene