Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4

Abstract

Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)]. In this work, we report that the quantization of LHE, which we call the quantum anomalous layer Hall effect (QALHE), can be realized in MnBi2Te4. The QALHE originates from kicking a layer-locked Berry-curvature monopole out of the Fermi sea by a vertielectric cal field. Remarkably, we demonstrate that the electric-field reversal can switch the sign of the quantized Hall conductance of QALHE in the even-layered AFM phase. The QALHE can also be realized in the ferromagnetic phase. These results provide a promising way toward the electric engineering of the Berry curvature monopoles and quantized-layered transport in topological magnets.

6 pages, 4 figures (+ supplementary materials 6 pages, 4 figures)

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Cited by in corpus (13)

• Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators
• Time-Reversal Even Charge Hall Effect from Twisted Interface Coupling
• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Orbital Chern Insulator at $\nu =-2$ in Twisted MoTe${}_2$
• High spin axion insulator
• The Layer Hall Effect without External Electric Field
• Electrical reversal of the sign for magnon thermal Hall coefficient in a van der Waals bilayer antiferromagnet
• Chiral edge state coupling theory of transport in quantum anomalous Hall insulators
• Magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulators
• Anomalous Hall effect from nonlinear magnetoelectric coupling
• Topological properties of domain walls in antiferromagnetic topological insulators
• Interlayer electric multipole Hall effect in twisted multilayers
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems