Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

Abstract

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi${}_2$Te${}_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.

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• Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4
• Spin-Polarized Antiferromagnetic Spintronics
• Role of hidden spin polarization in non-reciprocal transport of antiferromagnets
• Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4
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• Time-Reversal Even Charge Hall Effect from Twisted Interface Coupling
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• High spin axion insulator
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• Ferroelectric Antiferromagnetic Lifting of Spin-Valley Degeneracy
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