Dissipationless Layertronics in Axion Insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$

Abstract

Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect [Gao et al., Nature 595, 521 (2021)]. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ with tailored domain structure. This makes $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ a versatile platform to exploit the "layertronics" to encode, process, and store information. Importantly, the layer filter, layer valve, and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic-devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low energy consumption in the framework of layertronics.

8 pages, 4 figures (+Supplementary Materials: 12 pages, 10 figures)

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Cited by in corpus (13)

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• Intrinsic Magnetic Topological Materials
• Half-Quantized Helical Hinge Currents in Axion Insulators
• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
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• Twistronics and moiré superlattice physics in 2D transition metal dichalcogenides
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• The electronic structure of intrinsic magnetic topological insulator MnBi2Te4 quantum wires
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
• Interlayer electric multipole Hall effect in twisted multilayers