Intrinsic Layer-Polarized Anomalous Hall Effect in Bilayer MnBi2Te4

Abstract

Layer-polarized anomalous Hall effect (LP-AHE) is an attractive phenomenon in condensed-matter physics from the standpoints of both fundamental interest and device applications. The current LP-AHE research is based on the extrinsic paradigm of using external electric fields, in which the generation and control of LP-AHE are not straightforward. Here, we propose a novel mechanism that realizes intrinsic LP-AHE in bilayer lattices, through the mediation of sliding physics and Berry curvature. Moreover, this mechanism could render the LP-AHE in a controllable and reversable fashion. We analyze the symmetry requirements for a system to host such intrinsic LP-AHE. Its validity is further demonstrated in a real material of bilayer MnBi2Te4. By stacking with broken inversion symmetry, the layer-locked Berry curvature enables the intrinsic LP-AHE in bilayer MnBi2Te4, and the switchable control of its LP-AHE is achieved by sliding ferroelectricity. Our work opens a significant new direction for LP-AHE and two-dimensional (2D) materials research.

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Cited by in corpus (12)

• Stacking-dependent ferroicity of reversed bilayer: altermagnetism or ferroelectricity
• Spin-Polarized Antiferromagnetic Spintronics
• Spontaneous Anomalous Hall Effect in Two-Dimensional Altermagnets
• Dissipationless Layertronics in Axion Insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• Time-Reversal Even Charge Hall Effect from Twisted Interface Coupling
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• Altermagnetism in Two Dimensional Ca${}_2$RuO${}_4$ Perovskite
• The Layer Hall Effect without External Electric Field
• Electrical reversal of the sign for magnon thermal Hall coefficient in a van der Waals bilayer antiferromagnet
• An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi${}_2$Te${}_4$
• Quantum spin Hall effect in bilayer honeycomb lattices with C-type antiferromagnetic order
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems