An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi${}_2$Te${}_4$

Abstract

Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic study based on a realistic material system is still limited. As the only experimentally realized antiferromagnetic topological insulator, MnBi${}_2$Te${}_4$ becomes a vital platform for exploring various topological states. In this work, by using the comprehensive first-principles calculations, we demonstrate that the QAHE can also be realized in compensated antiferromagnetic even-septuple-layer MnBi${}_2$Te${}_4$ without combined parity-time ($\mathcal{P}\mathcal{T}$) symmetry. Using a magnetic topological insulator model, the layer-resolved Chern number is calculated to further understand the physical origin of different Chern numbers. The application of external hydrostatic pressure can strengthen the Te-Te quasicovalent bond due to the dramatic compression of the van der Waals gap. Thus, the resulting topological nontrivial gap can exceed the room-temperature energy scale in a wide range of pressures. Additionally, we find that constructing MnBi${}_2$Te${}_4$/CrI${}_3$ heterostructure can realize the compensated antiferromagnetic configurations with QAHE. Our findings illustrate the realization of QAHE in compensated antiferromagnetic even-septuple-layer MnBi${}_2$Te${}_4$ and provide a reliable strategy to obtain the corresponding magnetic configurations.

References in corpus (47)

• Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
• Chern semi-metal and Quantized Anomalous Hall Effect in HgCr2Se4
• Intrinsic quantized anomalous Hall effect in a moiré heterostructure
• Prediction and observation of the first antiferromagnetic topological insulator
• Intrinsic magnetic topological insulators in van der Waals layered MnBi${}_2$Te${}_4$-family materials
• Altermagnetism: spin-momentum locked phase protected by non-relativistic symmetries
• Topological axion states in magnetic insulator MnBi${}_2$Te${}_4$ with the quantized magnetoelectric effect
• Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice
• Experimental realization of an intrinsic magnetic topological insulator
• Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Ab initio calculation of the anomalous Hall conductivity by Wannier interpolation
• Quantum anomalous Hall effect from intertwined moiré bands
• Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
• Layer Hall effect in a 2D topological Axion antiferromagnet
• Intrinsic Quantum Anomalous Hall Effect in the Kagome Lattice Cs2LiMn3F12
• Spin-group symmetry in magnetic materials with negligible spin-orbit coupling
• Electronic phase separation in topological surface states of rhombohedral graphite
• Surfaces of Axion Insulators
• Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film
• Spin-orbit driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene
• Quantum anomalous Hall effect in ferromagnetic transition metal halides
• Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
• Odd-even layer-number effect and layer-dependent magnetic phase diagrams in MnBi2Te4
• Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation
• Quantum Anomalous Hall Effect in Antiferromagnetism
• Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene
• High-Temperature Quantum Anomalous Hall Insulators in Lithium-Decorated Iron-Based Superconductor Materials
• Intrinsic Layer-Polarized Anomalous Hall Effect in Bilayer MnBi2Te4
• Anomalous Hall effect at half filling in twisted bilayer graphene
• Non-relativistic spin splitting in compensated magnets that are not altermagnets
• Tunable moiré materials for probing Berry physics and topology
• Pressure-induced dimensional crossover in a kagome superconductor
• Monolayer V2MX4: A new family of quantum anomalous Hall insulators
• Pressure-Induced Modification of Anomalous Hall Effect in Layered Fe${}_3$GeTe${}_2$
• Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets
• Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures
• Chern-insulator phase in antiferromagnets
• Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
• Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
• Ferroelectrically switchable magnetic multistates in MnBi${}_2$Te${}_4$(Bi${}_2$Te${}_3$)${}_n$ and MnSb${}_2$Te${}_4$(Sb${}_2$Te${}_3$)${}_n$ (n = 0, 1) thin films
• Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
• Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films

Cited by in corpus (1)

• Altermagnetism Induced Topological Phase Transitions in Kane-Mele Model