Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films

Abstract

We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization configuration. Using this criteria we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally.

6 pages + 4 figures, supplemental materials not included

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Cited by in corpus (6)

• Chern-insulator phase in antiferromagnets
• Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
• Kerr, Faraday, and Magnetoelectric Effects in MnBi${}_2$Te${}_4$ Thin Films
• Néel Spin-Orbit Torque in Antiferromagnetic Quantum Spin and Anomalous Hall Insulators
• An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi${}_2$Te${}_4$
• Role of non-magnetic spacers in the magnetic interactions of antiferromagnetic topological insulators MnBi${}_4$Te${}_7$ and MnBi${}_2$Te${}_4$