paper

Gate-Tunable Quantum Anomalous Hall Effects in MnBiTe Thin Films

arXiv:2101.07181 · doi:10.1103/PhysRevMaterials.5.L051201

Abstract

The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBiTe. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{ö}dinger-Poisson self-consistent-field equations.

13 pages, 3+6 figures

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