Gate-Tunable Quantum Anomalous Hall Effects in MnBi${}_2$Te${}_4$ Thin Films

Abstract

The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi${}_2$Te${}_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the $\sim 10$ meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{ö}dinger-Poisson self-consistent-field equations.

arXiv comment13 pages, 3+6 figures

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Cited by in corpus (12)

• Colloquium: Quantum anomalous Hall effect
• Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators
• Metamagnetism of few layer topological antiferromagnets
• Kerr, Faraday, and Magnetoelectric Effects in MnBi${}_2$Te${}_4$ Thin Films
• Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films
• Magnetic topological transistor exploiting layer-selective transport
• Electric and magnetic fields tuned spin-polarized topological phases in two-dimensional ferromagnetic MnBi${}_4$Te${}_7$
• Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect
• Infrared study of the layered, magnetic insulator Mn(Bi${}_{0.07}$Sb${}_{0.93}$)${}_2$Te${}_4$ at low temperatures
• Optical study of the charge dynamics evolution in the topological insulators MnBi${}_2$Te${}_4$ and Mn(Bi${}_{0.74}$Sb${}_{0.26}$)${}_2$Te${}_4$ under high pressure
• Evolution of the optical response of the magnetic topological insulators Mn(Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_4$ with Sb content
• Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers