Gate-Tunable Quantum Anomalous Hall Effects in MnBiTe Thin Films
arXiv:2101.07181 · doi:10.1103/PhysRevMaterials.5.L051201
Abstract
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBiTe. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{ö}dinger-Poisson self-consistent-field equations.
13 pages, 3+6 figures
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Cited by in corpus (12)
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- Kerr, Faraday, and Magnetoelectric Effects in MnBiTe Thin Films
- Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films
- Magnetic topological transistor exploiting layer-selective transport
- Electric and magnetic fields tuned spin-polarized topological phases in two-dimensional ferromagnetic MnBiTe
- Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect
- Infrared study of the layered, magnetic insulator Mn(BiSb)Te at low temperatures
- Optical study of the charge dynamics evolution in the topological insulators MnBiTe and Mn(BiSb)Te under high pressure
- Evolution of the optical response of the magnetic topological insulators Mn(BiSb)Te with Sb content
- Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers