Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect

Abstract

A delicate tension complicates the relationship between the topological magnetoelectric effect (TME) in three-dimensional (3D) ${\mathbb{Z}}_2$ topological insulators (TIs) and time-reversal symmetry (TRS). TRS underlies a particular ${\mathbb{Z}}_2$ topological classification of the electronic ground state of crystalline band insulators and the associated quantization of the magnetoelectric response coefficient calculated using bulk linear response theory but, according to standard symmetry arguments, simultaneously forbids a nonzero magnetoelectric coefficient in any physical finite-size system. This contrast between theories of magnetoelectric response in formal bulk models and in real finite-sized materials originates from the distinct approaches required to introduce notions of (electronic) polarization and orbital magnetization in these fundamentally different environments. In this work we argue for a modified interpretation of the bulk linear response calculations in non-magnetic ${\mathbb{Z}}_2$ TIs that is more plainly consistent with TRS, and use this interpretation to discuss the effect's observation - still absent over a decade after its prediction. Motivated by analytical results, we conjecture a type of microscopic bulk-boundary correspondence: a bulk insulator with (generalized) TRS supports a magnetoelectric coefficient that is purely itinerant (which is generically related to the geometry of the ground state) if and only if magnetic surface dopants are required for the TME to manifest in finite samples thereof. We conclude that in non-magnetic ${\mathbb{Z}}_2$ TIs the TME is activated by magnetic surface dopants, that the charge density response to a uniform dc magnetic field is localized at the surface and specified by the configuration of those dopants, and that the TME is qualitatively less robust against disorder than the integer quantum Hall effect.

33 pages, 5 figures

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Cited by in corpus (3)

• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Capacitive scheme to detect the topological magnetoelectric effect
• Bulk versus surface: Nonuniversal partitioning of the topological magnetoelectric effect