Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

Abstract

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi${}_2$Te${}_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{P}\mathcal{T}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi${}_2$Te${}_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.

arXiv comment7 pages, 4 figures

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• Quantum kinetic theory of quadratic responses
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• Magnetic topological transistor exploiting layer-selective transport
• Altermagnetism Induced Topological Phase Transitions in Kane-Mele Model
• Magnetic parity violation and parity-time-reversal-symmetric magnets
• A Dirac-fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers
• Berry-Curvature Engineering for Nonreciprocal Directional Dichroism in Two-Dimensional Antiferromagnets
• Electric and magnetic fields tuned spin-polarized topological phases in two-dimensional ferromagnetic MnBi${}_4$Te${}_7$
• Tutorial: From Topology to Hall Effects -- Implications of Berry Phase Physics
• Ferroelectric Antiferromagnetic Lifting of Spin-Valley Degeneracy
• Geometrical Nonlinear Hall Effect Induced by Lorentz Force
• Nonreciprocal phonons in PT-symmetric antiferromagnet
• Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators
• An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi${}_2$Te${}_4$
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• Quantum anomalous Hall conductivity in altermagnets under applied magnetic field